data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 BAW56W dual switching diodes device marking BAW56W = a1 maximum ratings (t a = 25c) rating symbol max unit reverse voltag v r 70 vdc forward current i f 200 madc peak forward surge current i fm(surge) 50 0 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (1) p d 200 mw t a = 25c derate above 25c 1.6 mw/c thermal resistance, junction to ambient r ja 0.625 c/w total device dissipation p d 300 mw alumina substrate (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min max unit off characteristics reverse breakdown voltage v (br) 70 ? vdc (i (br) = 100 adc) reverse voltage leakage current i r adc (v r = 25 vdc, t j = 150c) ? 30 (v r = 70 vdc) ? 2.5 (v r = 70 vdc, t j = 150c) ? 50 diode capacitance c d ? 2.0 pf (v r = 0, f = 1.0 mhz) forward voltage v f mvdc (i f = 1.0 madc) ? 715 (i f = 10 madc) ? 855 (i f = 60 madc) ? 1000 (i f = 150 madc) ? 1250 reverse recovery time t rr ? 6.0 ns (i f = i r = 10 madc, r l = 100 ? , i r(rec) = 1.0 madc) (figure 1) 1. fr?5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3 anode cathode 1 cathode 2 z pb-free package is available. ordering information device marking shipping BAW56W a1 3000/tape&reel sot?323 1 2 3 h
http://www.yeashin.com 2 rev.02 20120305 device characteristics BAW56W notes: 1. a 2.0 k ? variable resistor adjusted for a forward current (i f ) of 10ma. 2. input pulse is adjusted so i r(peak) is equal to 10ma. 3. t p ? t rr figure 1. recovery time equivalent test circuit +10 v 2.0 k 820 ? 100 h 0.1 f d.u.t. 0.1 f 50 ? output pulse generator t r 50 ? input sampling oscilloscope t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) input signal i f v r 100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20304050 10 1.0 0.1 0.01 0.001 02 4 6 8 2.0 1.0 i f , forward current (ma) v f , forward voltage (volts) figure 2. forward voltage v r , reverse voltage (volts) figure 3. leakage current v r , reverse voltage (volts) figure 4. capacitance i r , reverse current ( a) c d diode capacitance (pf)
http://www.yeashin.com 3 rev.02 20120305 package outline & dimensions BAW56W sot?323 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref
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